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NEC's HIGH CTR 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER
FEATURES
* SMALL AND THIN PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm * HIGH CURRENT TRANSFER RATIO: CTR = 200% TYP @ IF = 1 mA, VCE = 5 V * HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. * TAPE AND REEL AVAILABLE
PS2911-1
DESCRIPTION
NEC's PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat lead package has been provided which realizes a reduction in mounting area of about 30% compared with the PS28XX series.
APPLICATIONS
* DC/DC CONVERTER * MODEM/PC CARD
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER SYMBOLS Diode VF IR CT ICEO CTR VCE(sat) RI-O Coupled CI-O tR tF ton ts toff PARAMETERS Forward Voltage, IF = 5 mA Reverse Current, VR = 5 V Terminal Capacitance, V = 0, f = 1.0 MHz Collector to Emitter Current, IF = 0 mA, VCE = 40 V Current Transfer Ratio (IC/IF)1, IF = 1 mA, VCE = 5 V Collector Saturation Voltage, IF = 1 mA, IC = 0.2 mA Isolation Resistance, VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 Fall Time2, VCC = 5 V, IC = 2 mA, RL = 100 On Time2, VCC = 5 V, IF = 1 mA, RL = 5 k Storage Time2, VCC = 5 V, IF = 1 mA, RL = 5 k Off Time2, VCC = 5 V, IF = 1 mA, RL = 5 k UNITS V A pF nA % V pF s s s s s PS2911-1 3 4 1011 0.4 5 10 40 10 120 100 200 0.13 15 100 400 0.3 MIN 0.9 PS2911-1 TYP 1.1 MAX 1.3 5
Transistor
1. CTR RANK: N: 100 to 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%)
2. Test Circuit for Switching Time
PULSE INPUT PW = 100 s Duty Cycle = 1/10 In monitor IF 50 VOUT RL = 100 or 5 k VCC
1
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Date Published: August 4, 2005
PS2911-1
ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS Diode IF IF/C IF (Peak) PD VR Transistor VCEO VECO IC PC/C PC Coupled BV PT TA TSTG PARAMETERS Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage3 Total Power Dissipation Operating Ambient Temp. Storage Temperature UNITS mA mA/C A mW V V V mA mW/C mW Vr.m.s. mW C C RATINGS 50 0.5 0.5 60 6 40 5 40 1.2 120 2500 160 -55 to +100 -55 to +150
OPTOCOUPLER CONSTRUCTION
PARAMETER Air Distance Creepage Distance Isolation Distance UNITS (MIN) 4 mm 4 mm 0.4 mm
OUTLINE DIMENSIONS (Units in mm)
2.50.3 4 3
4.60.2
N
1 2
Notes: 1. Operation in excess pf any one of these parameters may result in permanent damage. 2. PW = 100 s, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings.
5.00.2
0.15 -0.05
2.1 MAX
0.40.1 1.27
+0.1
0.20.1
TOP VIEW 1. Anode 2. Cathode 3. Emitter 4. Collector
ORDERING INFORMATION (Solder Contains Lead)
PART NUMBER PS2911-1-F3 PS2911-1-F4 PACKING STYLE Embossed Tape 3500 pcs/reel
ORDERING INFORMATION (Pb-Free)
PART NUMBER PS2911-1-F3-A PS2911-1-F4-A PACKING STYLE Embossed Tape 3500 pcs/reel
RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm)
(0.35)
0.8 0.6 1.27
MARKING
11
N
-Last number of Type No: 11 -An initial of "NEC" -Assembly lot
24-R0.1
4.14
111
No. 1 pin mark (nicked corner) 1
4.7
5.7
( ): Reference value
11 Week assembled Year assembled
Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use.
4.1 MIN
PS2911-1
TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)
MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE Transistor Power Dissipation, PC (mW)
80
140
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
Maximum Forward Current, IF (mA)
120 100 80 60 40 20
60
40
0.5 mA/C
20
0
25
50
75
100
0
25
50
75
100
120
Ambient Temperature, TA (C)
Ambient Temperature, TA (C)
FORWARD CURRENTvs. FORWARD VOLTAGE
100
COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE
20 18 CTR = 200 % IF = 5 mA
Forward Current, IF (mA)
10
Collector Current, IC (V)
TA = +100C +60C +25C 0C -25C -50C
16 14 12 10 8 6 4 2
1
0.1
2 mA 1 mA 0.5 mA 2 4 6 8 10
0.01 0.0
0.5
1.0
1.5
2.0
0
Forward Voltage, VF (V)
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Dark Current, ICEO (nA)
10000
COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE
10
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
CTR = 200% 5 mA 2 mA
1000 VCE = 20 V 40 V
Collector Current, IC (mA)
1 mA 1
100
IF = 0.5 mA
10
1 -25
0
25
50
75
100
0.1 0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature, TA (C)
Collector Saturation Voltage, VCE(sat) (V)
PS2911-1
TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)
NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio, CTR
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 Normalized to 1.0 at TA = 25C, IF = 1 mA, VCE = 2 V -25 0 25 50 75 100
500
CURRENT TRANSFER RATIO vs. FORWARD CURRENT
VCE = 5 V, n=3
Sample A B C
Current Transfer Ratio, CTR (%)
400
300
200
100
0 0.1
1
10
100
Ambient Temperature, TA (C)
Forward Current, IF (mA)
SWITCHING TIME vs. LOAD RESISTANCE
10000
IF = 1 mA, VCC = 5 V, CTR = 200 %
FREQUENCY RESPONSE
Switching Time, t (s)
Normalized Gain, GV
1000
toff
0
-5
RL = 1 k
100
100
ts ton
-10
300
-15
10
-20
1 1k
10k
100k
1000k
-25 0.1
1
10
100
1000
Load Resistance, RL ()
Frequency, f (kHz)
LONG TERM CTR DEGRADATION
1.2 IF = 1 mA 1.0 TA = 25C
CTR (relative Value)
0.8 0.6 0.4 0.2 60C
0.0
10
10 2
10 3
10 4
10 5
10 6
Time (Hr)
PS2911-1
TAPING SPECIFICATIONS (Units in mm)
Tape Outline and Dimensions
2.0 0.5 4.0 0.1
1.75 0.1
1.55 -0
+0.1
2.9 MAX
12.0 0.2
5.3 0.1
5.3 0.1 2.40.1
1.55 0.05 4.0 0.1
2.9 0.1
Tape Direction
PS2911-1-F3
PS2911-1-F4
N
N
N
N
Reel Outline and Dimensions
2.00.5
2.0 0.5 13.0 0.2
3302.0 100 1.0
R1.0
21.0 0.8
Packing: 3500 pcs/reel
N
N
N
N
13.51.0
11.9 to 15.4 Outer edge of flange
PS2911-1
Recommended Soldering Conditions
(1) Infrared reflow soldering * Peak reflow temperature * Time of peak reflow temperature * Time of temperature higher than 220 C * Time to preheat temperature from 120 to 180C * Number of reflows * Flux 260 C or below (package surface temperature) 10 seconds or less 60 seconds or less 12030 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended).
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (C)
(heating) to 10 s 260 C (peak temperature) 220 C to 60 s 180 C 120C 12030 s (preheating)
(2) Wave soldering * Temperature * Time * Preheating conditions * Number of times * Flux
Time (s)
260 C or below (molten solder temperature) 10 seconds or less 120C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended).
(3) Cautions * Fluxes USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity.
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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